Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction
نویسندگان
چکیده
منابع مشابه
Design of Double Gate Vertical MOSFET using Silicon On Insulator (SOI) Technology
Received April 27, 2012 Revised May 14, 2012 Accepted May 26, 2012 Application of symmetric double gate vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their layout, which is considerably larger than for a lateral MOSFET on the same technology node. A simple process simulation has been developed to reduce the...
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ژورنال
عنوان ژورنال: Journal of Mechanical Engineering and Sciences
سال: 2019
ISSN: 2231-8380,2289-4659
DOI: 10.15282/jmes.13.3.2019.16.0442